A High-Efficiency Solution-Deposited Thin-Film Photovoltaic Device
[Advanced Materials, Mitzi et al, IBM] In an effort to significantly reduce fabrication costs relative to vacuum-based approaches (e.g., no vacuum requirements, less energy intensive deposition, better materials utilization efficiency), as well as known solution-based approaches (e.g., fewer processing steps, no high-temperature selenization treatment, more facile Ga incorporation), we are pursuing a simple molecular-based approach for solution-depositing CIGS layers. (...) yielding a short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor, and total area power conversion efficiency of 25.7 mA cm2, 605 mV, 0.66, and 10.3%, respectively.